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Ma ʻaneʻi e hōʻike ana mākou i nā ʻano wai hoʻoheheʻe ʻia i hoʻokomo ʻia, kūʻokoʻa a koho ʻia o nā mea hoʻoheheʻe wai metala ma luna o nā ʻili metala me nā hiʻohiʻona topographical microscale.ʻO nā mea hoʻoheheʻe metala wai e pili ana i ka gallium he mau mea kupanaha me ka haʻalulu nui o ka ʻili.No laila, paʻakikī ke hana ʻana iā lākou i mau kiʻiʻoniʻoni lahilahi.Ua hoʻokō ʻia ka hoʻomaʻemaʻe piha ʻana o ka huila eutectic o ka gallium a me ka indium ma luna o ka microstructured copper surface i mua o nā HCl vapors, nāna i hoʻoneʻe i ka ʻokikene kūlohelohe mai ka ʻili metala wai.Ua wehewehe ʻia kēia pulu ma muli o ke kumu hoʻohālike Wenzel a me ke kaʻina osmosis, e hōʻike ana he mea koʻikoʻi ka nui microstructure no ka hoʻomaʻemaʻe ʻana i nā metala wai.Eia hou, hōʻike mākou e hiki ke koho koho ʻia ka pulu ʻana o nā metala wai ma nā wahi microstructured ma kahi ʻili metala e hana i nā ʻano.Hoʻopili like kēia kaʻina hana maʻalahi a hoʻohālikelike i ka metala wai ma luna o nā wahi nui me ka ʻole o ka ikaika o waho a i ʻole ka lawelawe paʻakikī.Ua hōʻike mākou i nā substrate i hoʻohālikelike ʻia me ka wai wai e hoʻopaʻa i nā pili uila ʻoiai ke hoʻolohi ʻia a ma hope o nā pōʻai hoʻopaneʻe.
ʻO nā mea hoʻoheheʻe wai metala (GaLM) ma muli o ko lākou mau waiwai hoihoi e like me ka helu heheʻe haʻahaʻa, ka conductivity uila kiʻekiʻe, haʻahaʻa viscosity a me ke kahe, haʻahaʻa haʻahaʻa a me ke kiʻekiʻe deformability1,2.He 30 °C ko ka galium ma'ema'e, a i ka hui 'ana me kekahi mau metala e like me In a me Sn, aia ka helu hehe'e ma lalo o ka mahana wela.ʻO nā GaLM koʻikoʻi ʻelua he gallium indium eutectic alloy (EGaIn, 75% Ga a me 25% In ma ke kaupaona, helu heheʻe: 15.5 °C) a me gallium indium tin eutectic alloy (GaInSn a i ʻole galinstan, 68.5% Ga, 21.5% In, a me 10. % tin, wahi hehee: ~11 °C)1.2.Ma muli o kā lākou hoʻoili uila i ka pae wai, ke noiʻi ikaika ʻia nei nā GaLM ma ke ʻano he ala uila tensile a deformable paha no nā ʻano noi like ʻole, me ka electronic3,4,5,6,7,8,9 strained a curved sensors 10, 11, 12 , 13, 14 a me ke alakaʻi 15, 16, 17. ʻO ka hana ʻana o ia mau mea hana ma ka waiho ʻana, paʻi ʻana, a me ka hoʻohālike ʻana mai GaLM e pono ai ka ʻike a me ka hoʻomalu ʻana i nā waiwai interfacial o GaLM a me kona substrate lalo.Loaʻa i nā GaLM ka ʻūhā ili kiʻekiʻe (624 mNm-1 no EGaIn18,19 a me 534 mNm-1 no Galinstan20,21) hiki iā lākou ke paʻakikī i ka mālama ʻana a i ʻole ka manipulate.ʻO ka hoʻokumu ʻana i kahi ʻōpala paʻa o ka gallium oxide maoli ma ka ʻili GaLM ma lalo o nā kūlana ambient e hāʻawi i kahi pūpū e hoʻopaʻa i ka GaLM ma kahi ʻano pōʻai ʻole.Hiki i kēia waiwai ke paʻi ʻia ʻo GaLM, hoʻokomo ʻia i loko o nā microchannels, a hoʻohālikelike ʻia me ka paʻa interfacial i loaʻa e oxides19,22,23,24,25,26,27.ʻO ka pūpū ʻokikene paʻakikī hoʻi e hiki ai iā GaLM ke hoʻopili i nā ʻili maʻemaʻe loa, akā pale i nā metala viscosity haʻahaʻa mai ke kahe wale ʻana.ʻO ka hoʻolaha ʻana o GaLM ma ka hapa nui o nā ʻili e pono ai ka ikaika e wāwahi i ka pūpū oxide28,29.
Hiki ke hoʻoneʻe ʻia nā pūpū oxide me, no ka laʻana, nā waikawa ikaika a i ʻole nā ​​kumu.I ka loaʻa ʻole o nā oxides, hāʻule nā ​​puka GaLM ma kahi kokoke i nā ʻili āpau ma muli o ko lākou haʻalulu nui o ka ʻili, akā aia nā ʻokoʻa: ʻo GaLM pulu nā substrate metala.Hoʻokumu ʻo Ga i nā paʻa metala me nā metala ʻē aʻe ma o ke kaʻina hana i kapa ʻia ʻo "reactive wetting"30,31,32.ʻIke pinepine ʻia kēia wai hoʻoheheʻe ʻana me ka loaʻa ʻole o nā oxides ili e hoʻomaʻamaʻa i ka hoʻopili metala-i-metala.Eia nō naʻe, ʻoiai me nā oxides maoli ma GaLM, ua hōʻike ʻia e hana ʻia nā mea hoʻopili metala i ka wā e haki ai nā oxides i nā pilina me nā ʻili metala paheʻe29.ʻO ka hoʻomaʻemaʻe ʻana ka hopena i nā kihi pili haʻahaʻa a me ka pulu maikaʻi o ka hapa nui o nā substrates metala33,34,35.
I kēia lā, nui nā haʻawina i hana ʻia e pili ana i ka hoʻohana ʻana i nā waiwai maikaʻi o ka hoʻomaʻemaʻe reactive o GaLM me nā metala e hana i kahi kumu GaLM.No ka laʻana, ua hoʻohana ʻia ʻo GaLM i nā ala metala paʻa i hoʻohālikelike ʻia e ka hamo ʻana, ka ʻōwili ʻana, ka hoʻopuʻi ʻana, a i ʻole ka uhi ʻana i ke aka34, 35, 36, 37, 38. ʻO ka hoʻomaʻemaʻe koho ʻana o GaLM ma nā metala paʻa e hiki ai iā GaLM ke hana i nā ʻano paʻa a i wehewehe maikaʻi ʻia.Eia nō naʻe, ʻaʻole ka haʻalulu kiʻekiʻe o GaLM i ka hoʻokumu ʻana i nā kiʻi ʻoniʻoni ʻoniʻoni like ʻole ma nā substrate metala.No ka hoʻoponopono ʻana i kēia pilikia, ʻo Lacour et al.Ua hōʻike ʻia kahi ʻano hana no ka hana ʻana i nā kiʻi ʻoniʻoni lahilahi GaLM maʻemaʻe a pālahalaha ma nā wahi nui ma o ka hoʻoheheʻe ʻana i ka galium maʻemaʻe ma luna o nā substrate microstructured i uhi ʻia i ke gula37,39.Pono kēia ʻano hana i ka waiho ʻana i ka vacuum, kahi lohi loa.Eia kekahi, ʻaʻole ʻae ʻia ʻo GaLM no ia mau mea hana ma muli o ka hiki ʻana o ka embrittlement40.Hoʻokomo pū ka evaporation i ka mea ma luna o ka substrate, no laila pono ke kumu e hana ai i ke kumu.Ke ʻimi nei mākou i ala e hana ai i nā kiʻiʻoniʻoni GaLM maʻemaʻe a me nā ʻano hoʻohālike ma o ka hoʻolālā ʻana i nā hiʻohiʻona metala topographic e pulu wale a koho ʻia e GaLM me ka loaʻa ʻole o nā oxides maoli.Maʻaneʻi mākou e hōʻike nei i ka hoʻomaʻemaʻe koho wale ʻana o ka oxide-free EGaIn (GaLM maʻamau) me ka hoʻohana ʻana i ka ʻano hoʻomaʻemaʻe kūʻokoʻa ma nā substrate metala i kūkulu ʻia i ka photolithographically.Hana mākou i nā hale i wehewehe ʻia i ka photolithographically ma ka micro level e aʻo i ka imbibistion, a laila e hoʻomalu i ka pulu ʻana o nā metala wai ʻole o ka oxide.ʻO ka maikaʻi o ka wai ʻana o EGaIn ma luna o nā ʻili metala microstructured e wehewehe ʻia e ka loiloi helu e pili ana i ke ʻano Wenzel a me ke kaʻina hana impregnation.ʻO ka mea hope loa, hōʻike mākou i ka waiho ʻana o nā wahi nui a me ka hoʻohālikelike ʻana o EGaIn ma o ka hoʻoheheʻe ʻana iā ʻoe iho, ka hoʻomaʻemaʻe ʻana a me ke koho koho ʻana ma nā wahi deposition metala microstructured.Hōʻike ʻia nā electrodes tensile a me nā kānana e hoʻopili ana i nā hale EGaIn e like me nā noi kūpono.
ʻO ka absorption ka halihali capillary kahi e komo ai ka wai i ka ʻili 41, e maʻalahi ai ka laha ʻana o ka wai.Ua noiʻi mākou i ka hana pulu ʻana o EGaIn ma luna o nā ʻili microstructured metala i waiho ʻia i loko o ka mahu HCl (Fig. 1).Ua koho ʻia ke keleawe ma ke ʻano metala no ka ʻili lalo. Ma luna o nā ʻili keleawe palahalaha, hōʻike ʻo EGaIn i kahi kihi pili haʻahaʻa o <20° i mua o ka mahu HCl, ma muli o ka wetting reactive31 (Supplementary Fig. 1). Ma luna o nā ʻili keleawe palahalaha, hōʻike ʻo EGaIn i kahi kihi pili haʻahaʻa o <20° i mua o ka mahu HCl, ma muli o ka wetting reactive31 (Supplementary Fig. 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20 ° в присутствии паров HCl из-за реактивногива реактивногива с ok 1). Ma nā ʻāpana keleawe pālahalaha, hōʻike ʻo EGaIn i kahi kihi hoʻopili haʻahaʻa <20° i mua o ka mahu HCl ma muli o ka wetting reactive31 (Supplementary Figure 1).在平坦的铜表面上，由于反应润湿，EGaIn 在存在HCl 蒸气的情况下显示出<20° 的1低接3。在平坦的铜表面上，由于反应润湿，EGaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20 ° в присутствии паров HCl из-за гилочник рисунок 1). Ma luna o nā ʻili keleawe palahalaha, hōʻike ʻo EGaIn i nā kihi pili haʻahaʻa <20° i mua o ka mahu HCl ma muli o ka hoʻomaʻemaʻe ʻana (Hoʻohui Kiʻi 1).Ua ana mākou i nā kihi pili pili o EGaIn ma ke keleawe nui a ma nā kiʻi keleawe i waiho ʻia ma polydimethylsiloxane (PDMS).
a Columnar (D (diameter) = l (mamao) = 25 µm, d (ka mamao ma waena o nā kolamu) = 50 µm, H (kiʻekiʻe) = 25 µm) a me nā pyramidal (ākea = 25 µm, kiʻekiʻe = 18 µm) microstructures ma Cu / PDMS pani.b Nā hoʻololi e pili ana i ka manawa ma ke kihi pili ma nā substrate palahalaha (me ka ʻole o nā microstructures) a me nā ʻāpana o nā pou a me nā pyramids i loko o ka PDMS i uhi ʻia i ke keleawe.c, d Ka ho'opa'a 'ana o ka (c) ka 'ao'ao 'ao'ao a me (d) ka 'ike ki'eki'e o ka EGaIn e pulu ana ma ka ili me na kia i mua o ka mahu HCl.
No ka loiloi i ka hopena o ka topography ma ka pulupulu, ua hoʻomākaukau ʻia nā substrates PDMS me kahi kolamu a me ke ʻano pyramidal, kahi i waiho ʻia ai ke keleawe me kahi papa adhesive titanium (Fig. 1a).Ua hōʻike ʻia ʻo ka microstructured surface o ka PDMS substrate i conformally uhi ʻia me ke keleawe (Supplementary Fig. 2).Hōʻike ʻia nā kihi pili manawa o EGaIn ma ka PDMS (Cu/PDMS) i hoʻohālikelike ʻia a planar copper-sputtered (Cu/PDMS) ma Fig.1b.Ke hāʻule nei ka huina pili o EGaIn ma ke keleawe/PDMS i hoʻohālikelike ʻia i 0° i loko o ~1 min.Hiki ke hoʻohana ʻia ka hoʻomaʻemaʻe ʻana o nā microstructures EGaIn e ka Wenzel equation\({{{{\rm{cos}}}}}}\,{\theta}_{{rough}}=r\,{{ { {{ \rm{ cos}}}}}}\,{\theta}_{0}\), kahi \({\theta}_{{rough}}\) e hōʻike ana i ka huina hoʻopili o ka ʻili ʻeleʻele, \ (r \) ʻO ka ʻAla ʻili (= ʻāpana maoli/kahi i ʻike ʻia) a me ka huina pili ma ka mokulele \({\theta}_{0}\).ʻO nā hopena o ka hoʻomaʻemaʻe ʻana o EGaIn ma nā ʻaoʻao i hoʻohālikelike ʻia he ʻaelike maikaʻi me ka model Wenzel, no ka mea, ʻo ka r koʻikoʻi no ke kua a me nā papa hoʻohālike pyramidal he 1.78 a me 1.73.ʻO ia hoʻi, ʻo kahi hāʻule EGaIn i loaʻa ma kahi ʻaoʻao i hoʻohālikelike ʻia e komo i loko o nā awāwa o ke kōkua lalo.He mea nui e hoʻomaopopo i ka hoʻokumu ʻia ʻana o nā kiʻiʻoniʻoni pālahalaha loa i kēia hihia, ʻokoʻa i ka hihia me EGaIn ma nā ʻaoʻao i kūkulu ʻole ʻia (Supplementary Fig. 1).
Mai fig.1c,d (Kiʻiʻoniʻoni Hoʻohui 1) hiki ke ʻike ʻia ma hope o 30 s, ʻoiai ke hoʻokokoke ʻia nei ke kihi pili i ka 0°, hoʻomaka ʻo EGaIn e hoʻopuehu loa mai ka lihi o ka hāʻule, ʻo ia ke kumu o ka absorption (Supplementary Movie 2 a me Supplementary). Fig. 3).Ua pili nā haʻawina mua o nā ʻili palahalaha i ka pālākiō manawa o ka pulu ʻana me ka hoʻololi ʻana mai ka inertial a hiki i ka pulu liʻiliʻi.ʻO ka nui o ka ʻāina kekahi o nā kumu koʻikoʻi i ka hoʻoholo ʻana i ka hana ʻana o ka hoʻomaka ʻana iho.Ma ka hoʻohālikelike ʻana i ka ikehu o ka ʻili ma mua a ma hope o ka hoʻopili ʻana mai kahi ʻano thermodynamic, ua loaʻa ke kihi pili koʻikoʻi \({\theta}_{c}\)o ka imbibistion (e nānā i ke Kūkākūkā Hoʻohui no nā kikoʻī).Ua wehewehe ʻia ka hopena \({\theta}_{c}\) ʻo \({{{({\rm{cos))))))\,{\theta}_{c}=(1-{\ phi } _{S})/(r-{\phi}_{S})\) kahi \({\phi}_{s}\) e hōʻike ana i ka māhele hakina ma luna o ka pou a me \(r\ ) e hōʻike ana i ka ʻeleʻele o ka ʻili. Hiki ke ho'okō 'ia ka 'imibibition inā \({\theta }_{c}\) > \({\theta }_{0}\), 'o ia ho'i, ka huina pili ma ka 'ili palahalaha. Hiki ke ho'okō 'ia ka 'imibibition inā \({\theta }_{c}\) > \({\theta }_{0}\), 'o ia ho'i, ka huina pili ma ka 'ili palahalaha. Впитывание может происходить, когда \ ({\ theta } _ {c} \) > \ ({\ theta } _ {0} \), т.е.контактный угол на плоской поверхности. Hiki ke komo i ka wā \({\theta }_{c}\) > \({\theta }_{0}\), ʻo ia hoʻi ka huina pili ma ka ʻili palahalaha.当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。 Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Hana ʻia ka ʻūhā i ka \({\theta }_{c}\) > \({\theta }_{0}\), ka huina pili ma ka mokulele.No nā ʻili ma hope o ke ʻano, ua helu ʻia ʻo \(r\) a me \({\phi}_{s}\) e like me \(1+\{(2\pi {RH})/{d}^{2} \ } \ ) a me \(\pi {R}^{2}/{d}^{2}\), kahi o \(R\) e hoike ana i ka radius kolamu, \(H\) ke kiekie o ke kolamu, a me \ ( d\) ka mamao ma waena o nā kikowaena o nā kia ʻelua (Fig. 1a).No ka ʻili o ka post-structured ma fig.1a, ʻo ka huina \({\theta}_{c}\) he 60°, ʻoi aku ka nui ma mua o ka mokulele \({\theta}_{0}\) (~25° ) i loko o ka mahu HCl Oxide-free EGaIn ma Cu/PDMS.No laila, hiki i nā kulu EGaIn ke komo maʻalahi i ka ʻili keleawe i kūkulu ʻia ma Fig. 1a ma muli o ka absorption.
No ka noiʻi ʻana i ka hopena o ka nui topographic o ke kumu ma ka pulu a me ka absorption o EGaIn, ua hoʻololi mākou i ka nui o nā pou i uhi ʻia ke keleawe.Ma ka fig.Hōʻike ka 2 i nā kihi pili a me ka absorption o EGaIn ma kēia mau substrate.Ua like ka mamao l ma waena o nā kolamu me ke anawaena o nā kolamu D a mai 25 a 200 μm.He mau ke kiekie o 25 µm no na kolamu a pau.Ke emi nei ka \({\theta}_{c}\) me ka pi'i 'ana o ka nui o ke kolamu (Papa 1), 'o ia ho'i, he emi iki ka ho'o 'ana ma luna o nā pani me nā kolamu nui.No nā nui a pau i ho'āʻo ʻia, ʻoi aku ka nui o ka \({\theta}_{c}\) ma mua o ka \({\theta}_{0}\) a ke manaʻo ʻia nei ka wicking.Eia naʻe, ʻaʻole ʻike ʻia ka absorption no nā ʻili ma hope o ke ʻano me ka l a me D 200 µm (Fig. 2e).
he kihi pili pili manawa o EGaIn ma ka ʻili Cu/PDMS me nā kolamu o nā ʻano like ʻole ma hope o ka ʻike ʻana i ka mahu HCl.b–e Nā hiʻohiʻona kiʻekiʻe a me ka ʻaoʻao o ka pulu ʻana o EGaIn.b D = l = 25 µm, r = 1.78.i D = l = 50 μm, r = 1.39.dD = l = 100 µm, r = 1.20.eD = l = 200 µm, r = 1.10.He 25 µm ke kiʻekiʻe o nā pou a pau.Lawe ʻia kēia mau kiʻi ma kahi o 15 mau minuke ma hope o ka ʻike ʻana i ka mahu HCl.ʻO nā kulu liʻiliʻi ma EGaIn he wai ka hopena ma waena o ka gallium oxide a me ka mahu HCl.ʻO 2 mm ka nui o nā pā unahi ma (b – e).
ʻO kekahi kumu hoʻohālikelike no ka hoʻoholo ʻana i ka likelika o ka absorption wai ʻo ia ka hoʻopaʻa ʻana o ka wai ma luna o ka ʻili ma hope o ka hoʻohana ʻana i ke kumu.ʻO Kurbin et al.Ua hōʻike ʻia inā (1) kiʻekiʻe nā pou, e hoʻomoʻa ʻia nā kulu e ka ʻili i hoʻohālikelike ʻia;(2) liʻiliʻi ka mamao ma waena o nā kolamu;a (3) liʻiliʻi ka huina pili o ka wai ma luna o ka ʻili42.'O ka helu \({\theta}_{0}\) o ka wai ma luna o ka mokulele i loa'a ka mea pani ho'okahi, pono e emi ma mua o ka huina pili ko'iko'i no ke kui, \({\theta}_{c,{pin)) } \ ), no ka ʻai ʻana me ka ʻole o ka paʻi ʻana ma waena o nā pou, kahi \({\theta}_{c,{pin}}={{{{{\rm{arctan}}}}}}}(H/\big \{ ( \ sqrt {2}-1)l\big\})\) (e nānā i nā kūkākūkā hou no nā kikoʻī).Aia ka waiwai o \({\theta}_{c,{pin}}\) i ka nui pine (Pau 1).E hoʻoholo i ka ʻāpana dimensionless L = l/H no ka hoʻoholo inā loaʻa ka absorption.No ka lawe ʻana, pono e emi iho ka L ma mua o ka paepae paepae, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\tan} } { \ theta}_{{0}}\nui\}\).No ka EGaIn \(({\theta}_{0}={25}^{\circ})\) ma kahi pani keleawe \({L}_{c}\) he 5.2.No ka mea he 8 ke kolamu L o 200 μm, ʻoi aku ka nui ma mua o ka waiwai o \({L}_{c}\), ʻaʻole hiki ke komo ʻana o EGaIn.No ka ho'āʻo houʻana i ka hopena o ka geometry, uaʻike mākou i ka hoʻokumuʻana iā ia iho o nāʻano H a me l (Pūnaewele Fig. 5 a me ka Papa Hoʻohui 1).Ua kūpono nā hopena me kā mākou helu.No laila, lilo ʻo L i mea wānana maikaʻi no ka absorption;ho'ōki ka metala wai i ka hoʻopaʻa ʻana ma muli o ke kui ʻana i ka wā i ʻoi aku ka nui o ka mamao ma waena o nā kia e like me ke kiʻekiʻe o nā kia.
Hiki ke hoʻoholo ʻia ka wettability ma muli o ke ʻano o ka ʻili o ka substrate.Ua noiʻi mākou i ka hopena o ka hoʻokumu ʻana o ka ʻili i ka pulu a me ka absorption o EGaIn ma o ka waiho pū ʻana iā Si a me Cu ma nā pou a me nā mokulele (Supplementary Fig. 6).Ke emi nei ka huina hoʻopili EGaIn mai ~160° a ~80° i ka piʻi ʻana o ka ʻili binary Si/Cu mai 0 a 75% ma kahi ʻāpana keleawe paʻa.No ka ili he 75% Cu/25% Si, \({\theta}_{0}\) he ~80°, e pili ana i \({L}_{c}\) like me 0.43 e like me ka wehewehe ana maluna. .No ka mea, ʻo nā kolamu l = H = 25 μm me L e like me 1 ʻoi aku ka nui ma mua o ka paepae \({L}_{c}\), ʻaʻole e komo ka ili 75% Cu/25% Si ma hope o ka hoʻohālike ʻana ma muli o ka immobilization.Ma muli o ka piʻi ʻana o ka huina pili o EGaIn me ka hoʻohui ʻana o Si, ʻoi aku ka kiʻekiʻe o ka H a i ʻole ka l haʻahaʻa e lanakila ai i ka pinning a me ka impregnation.No laila, no ka mea, pili ka huina hoʻopili (ie \({\theta}_{0}\)) i ka hui kemika o ka ʻili, hiki iā ia ke hoʻoholo inā loaʻa ka imbibistion i loko o ka microstructure.
Hiki i ka EGaIn absorption ma ka copper/PDMS i hoʻohālikelike ʻia ke pulu i ka metala wai i nā kumu kūpono.I mea e loiloi ai i ka helu liʻiliʻi o nā laina kolamu e hoʻoulu ai i ka imbibistion, ua nānā ʻia nā waiwai pulu o EGaIn ma Cu/PDMS me nā laina post-pattern i loaʻa nā helu laina kolamu like ʻole mai 1 a 101 (Fig. 3).ʻO ka hoʻomaʻemaʻe nui ʻana ma ka ʻāina post-patterning.Ua nānā pono ʻia ka wicking EGaIn a ua hoʻonui ʻia ka lōʻihi wicking me ka helu o nā lālani o nā kolamu.ʻAʻole loa e loaʻa ka absorption inā loaʻa nā pou me nā laina ʻelua a liʻiliʻi paha.Hiki paha kēia ma muli o ka piʻi ʻana o ke kaomi capillary.No ka hiki ʻana o ka absorption i loko o ke ʻano columnar, pono e lanakila ke kaomi capillary i hana ʻia e ka curvature o ke poʻo EGaIn (Supplementary Fig. 7).Ke manaʻo nei he radius o ka curvature o 12.5 µm no ka lālani hoʻokahi poʻo EGaIn me ke ʻano columnar, ʻo ke kaomi capillary he ~0.98 atm (~740 Torr).Hiki i kēia kaomi Laplace kiʻekiʻe ke pale i ka pulu ma muli o ka absorption o EGaIn.Eia kekahi, hiki i ka liʻiliʻi o nā lālani kolamu ke hoʻemi i ka ikaika absorption ma muli o ka hana capillary ma waena o EGaIn a me nā kolamu.
he kulu o EGaIn ma Cu/PDMS i kūkulu ʻia me nā hiʻohiʻona o nā laula like ʻole (w) i ka ea (ma mua o ka ʻike ʻana i ka mahu HCl).Nā lālani lālani e hoʻomaka ana mai luna mai: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), a me 11 (w = 525 µm).b Ka hoʻomaʻamaʻa kuhikuhi ʻana o EGaIn ma (a) ma hope o ka ʻike ʻana i ka mahu HCl no 10 min.c, d Ka pulu ʻana o EGaIn ma Cu/PDMS me nā hale kolamu (c) ʻelua lālani (w = 75 µm) a me (d) hoʻokahi lālani (w = 25 µm).Lawe ʻia kēia mau kiʻi i 10 mau minuke ma hope o ka ʻike ʻana i ka mahu HCl.He 5 mm a me 200 µm ka pae unahi ma (a, b) a me (c, d).Hōʻike nā pua ma (c) i ka curvature o ke poʻo EGaIn ma muli o ke komo ʻana.
ʻO ka absorption o EGaIn i ka post-patterned Cu / PDMS e hiki ai iā EGaIn ke hoʻokumu ʻia e ka wetting koho (Fig. 4).Ke kau ʻia kahi kulu o EGaIn ma kahi i hoʻohālikelike ʻia a ʻike ʻia i ka mahu HCl, e hāʻule mua ka hāʻule o EGaIn, e hana ana i kahi kihi pili liʻiliʻi i ka wā e hoʻoneʻe ai ka waika i ka unahi.A laila, hoʻomaka ka absorption mai ka lihi o ka hāʻule.Hiki ke hoʻokō ʻia ke ʻano hoʻohālike ʻāpana nui mai ke kenimika-scale EGaIn (Fig. 4a, c).No ka mea aia wale ka absorption ma ka ʻili topographic, pulu wale ʻo EGaIn i ka ʻāpana kumu a aneane pau ka pulu ʻana ke hiki i kahi ʻili palahalaha.No laila, ʻike ʻia nā palena ʻoi o nā hiʻohiʻona EGaIn (Fig. 4d, e).Ma ka fig.Hōʻike ka 4b i ka hoʻouka ʻana o EGaIn i ka ʻāina i kūkulu ʻole ʻia, ʻoi aku ma kahi o kahi i waiho mua ʻia ai ka droplet EGaIn.No ka mea, ʻoi aku ka nui o ke anawaena liʻiliʻi o nā kulu EGaIn i hoʻohana ʻia ma kēia haʻawina ma mua o ka laula o nā leka i hoʻohālikelike ʻia.Hoʻokomo ʻia nā hāʻule o EGaIn ma ke kahua kumu ma o ka hoʻokele lima ʻana ma o ka nila 27-G a me ka syringe, e hopena i nā hāʻule me ka liʻiliʻi o 1 mm.Hiki ke hoʻoponopono ʻia kēia pilikia me ka hoʻohana ʻana i nā kulu liʻiliʻi EGaIn.ʻO ka holoʻokoʻa, hōʻike ka Figure 4 e hiki ke hoʻoulu a kuhikuhi ʻia ka pulu ʻana o EGaIn i nā wahi microstructured.Ke hoʻohālikelike ʻia me ka hana mua, ʻoi aku ka wikiwiki o kēia kaʻina hoʻomaʻemaʻe a ʻaʻohe ikaika o waho e koi ʻia e hoʻokō i ka pulu piha (Paʻa 2).
ka hōʻailona o ke kulanui, ka leka b, c ma ke ʻano o ka uila uila.Ua uhi ʻia ka ʻāina hoʻomoe me kahi ʻano kolamu me D = l = 25 µm.d, nā kiʻi i hoʻonui ʻia o nā iwi ʻaoʻao ma e (c).He 5 mm a me 500 µm nā pae unahi ma (a–c) a me (d, e).Ma (c–e), lilo nā kulu liʻiliʻi ma ka ʻili ma hope o ka hoʻopili ʻana i wai ma muli o ka hopena ma waena o ka gallium oxide a me ka mahu HCl.ʻAʻole i ʻike ʻia kahi hopena koʻikoʻi o ka hoʻokumu ʻana o ka wai i ka pulu.Hoʻopau maʻalahi ka wai ma o ka hoʻomaloʻo maʻalahi.
Ma muli o ke ʻano wai o EGaIn, hiki ke hoʻohana ʻia ʻo EGaIn coated Cu/PDMS (EGaIn/Cu/PDMS) no nā electrodes maʻalahi.Hoʻohālikelike ka Figure 5a i nā loli kū'ē o Cu/PDMS kumu a me EGaIn/Cu/PDMS ma lalo o nā ukana like ʻole.ʻO ke kū'ē o Cu / PDMS ke piʻi nui i ka haʻalulu, aʻo ke kū'ē o EGaIn / Cu / PDMS e mau ana i ka haʻahaʻa.Ma ka fig.5b a me d hōʻike i nā kiʻi SEM a me ka ʻikepili EMF pili o Cu/PDMS a me EGaIn/Cu/PDMS ma mua a ma hope o ka noi uila.No ka Cu/PDMS paʻa, hiki i ka hoʻololi ʻana ke hana i nā māwae i ke kiʻi Cu paʻakikī i waiho ʻia ma PDMS ma muli o ka elasticity mismatch.ʻO ka ʻokoʻa, no ka EGaIn/Cu/PDMS, ʻaʻahu maikaʻi ʻo EGaIn i ka substrate Cu/PDMS a mālama i ka hoʻomau uila me ka ʻole o nā māwae a i ʻole ka hoʻololi nui ʻana ma hope o ka hoʻopili ʻana.Ua hōʻoia ka ʻikepili EDS ua puʻunaue like ʻia ka gallium a me ka indium mai EGaIn ma ka substrate Cu/PDMS.Hoʻomaopopo ʻia ʻo ka mānoanoa o ke kiʻi ʻoniʻoni EGaIn he like a hoʻohālikelike ʻia me ke kiʻekiʻe o nā pou. Hōʻoiaʻiʻo ʻia kēia e ka loiloi topographical hou, kahi o ka ʻokoʻa pili ma waena o ka mānoanoa o ke kiʻi EGaIn a me ke kiʻekiʻe o ka pou he <10% (Supplementary Fig. 8 a me ka Papa 3). Hōʻoiaʻiʻo ʻia kēia e ka loiloi topographical hou, kahi o ka ʻokoʻa pili ma waena o ka mānoanoa o ke kiʻi EGaIn a me ke kiʻekiʻe o ka pou he <10% (Supplementary Fig. 8 a me ka Papa 3). Это также подтверждается дальнейшим топографическим анализом, где относительная разница между толщиной пленктой пленктой яет <10% (дополнительный рис. 8 и таблица 3). Ua hōʻoia pū ʻia kēia e ka nānā ʻana topographical hou, kahi o ka ʻokoʻa pili ma waena o ka mānoanoa kiʻiʻoniʻoni EGaIn a me ke kiʻekiʻe o ke kolamu he <10% (Supplementary Fig. 8 a me ka Papa 3).进一步的形貌分析也证实了这一点，其中EGaIn 薄膜厚度与柱子高度之间的相傹家表3）. <10% Это также было подтверждено дальнейшим топографическим анализом, где относительная разница между толгиной плеским авляла <10% (дополнительный рис. 8 и таблица 3). Ua hōʻoia pū ʻia kēia e ka loiloi topographical hou, kahi o ka ʻokoʻa pili ma waena o ka mānoanoa kiʻiʻoniʻoni EGaIn a me ke kiʻekiʻe o ke kolamu he <10% (Supplementary Fig. 8 a me ka Papa 3).ʻO kēia wai imbibition-based e hiki ai i ka mānoanoa o nā uhi EGaIn ke hoʻomalu maikaʻi ʻia a mālama ʻia ma luna o nā wahi nui, ʻo ia ka mea paʻakikī ma muli o kona ʻano wai.Nā kiʻi 5c a me e hoʻohālikelike i ka conductivity a me ke kū'ē i ka deformation o ka Cu/PDMS kumu a me EGaIn/Cu/PDMS.I ka demo, ua hoʻohuli ke LED i ka wā e pili ana i nā electrodes Cu / PDMS a i ʻole EGaIn / Cu / PDMS.Ke kau ʻia ʻo Cu/PDMS paʻa, pio ka LED.Eia naʻe, ua hoʻopaʻa ʻia nā electrodes EGaIn/Cu/PDMS me ka uila ma lalo o ka ukana, a ua emi iki ke kukui LED ma muli o ka piʻi ʻana o ke kūpaʻa electrode.
a Hoʻololi kūʻē maʻamau me ka hoʻonui ʻana i ka ukana ma Cu/PDMS a me EGaIn/Cu/PDMS.b, d nā kiʻi SEM a me ka ikehu dispersive X-ray spectroscopy (EDS) ka nānā ʻana ma mua (luna) a ma hope (lalo) polydiplexes i hoʻouka ʻia i (b) Cu/PDMS a me (d) EGaIn/Cu/methylsiloxane.c, e nā LED i hoʻopili ʻia i (c) Cu/PDMS a me (e) EGaIn/Cu/PDMS ma mua (luna) a ma hope o ka hohola ʻana (~ 30% stress).ʻO ka pā unahi ma (b) a me (d) he 50 µm.
Ma ka fig.Hōʻike ka 6a i ke kū'ē o EGaIn/Cu/PDMS ma ke ʻano he hana o ke koʻikoʻi mai 0% a 70%.ʻO ka hoʻonui a me ka hoʻihoʻi ʻana o ke kū'ē ʻana ua like ia me ka deformation, ʻo ia ka ʻaelike maikaʻi me ke kānāwai Pouillet no nā mea hiki ʻole ke hoʻopili ʻia (R/R0 = (1 + ε)2), kahi R ke kū'ē, R0 ke kū'ē mua, ε ke kānana 43. Ua hōʻike ʻia nā haʻawina ʻē aʻe i ka wā e kikoo ai, hiki i nā ʻāpana paʻa i loko o kahi ʻano wai ke hoʻonohonoho hou iā lākou iho a lilo i ka puʻunaue like ʻole me ka hui pū ʻana, a laila e hōʻemi i ka piʻi ʻana o ka huki 43, 44. Ma kēia hana, akā, ʻo ka conductor he> 99% wai metala ma ka leo ʻoiai ʻo nā kiʻi Cu he 100 nm wale nō ka mānoanoa. Ma kēia hana, akā, ʻo ka conductor he> 99% wai metala ma ka leo ʻoiai ʻo nā kiʻi Cu he 100 nm wale nō ka mānoanoa. Однако в этой работе проводник состоит из >99% жидкого металла по объему, так как пленки Cu имеют толщинму 1000. Eia nō naʻe, ma kēia hana, ʻo ka conductor he> 99% wai metala ma ka leo, ʻoiai ʻo nā kiʻi Cu he 100 nm wale nō ka mānoanoa.然而，在这项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99% 的液态金属（猉体。然而，在这项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99%Eia nō naʻe, ma kēia hana, ʻoiai ʻo ka kiʻiʻoniʻoni Cu he 100 nm ka mānoanoa, ʻoi aku ka nui o ka conductor ma mua o 99% metala wai (ma ka leo).No laila, ʻaʻole mākou e manaʻo e hāʻawi nui ʻo Cu i nā waiwai electromechanical o nā conductors.
he hoʻololi maʻamau i ka pale ʻana o EGaIn/Cu/PDMS e kūʻē i ke koʻikoʻi ma ka laulā 0-70%.ʻO ke koʻikoʻi koʻikoʻi i loaʻa ma mua o ka hiki ʻole o ka PDMS ʻo 70% (Supplementary Fig. 9).ʻO nā kiko ʻulaʻula he mau kumu waiwai i wānana ʻia e ke kānāwai o Puet.b EGaIn/Cu/PDMS ho'āʻo kūpaʻa conductivity i ka wā o nā pōʻaiapili hoʻopololei.Ua hoʻohana ʻia kahi kānana 30% i ka hoʻāʻo cyclic.ʻO 0.5 knm ka lōʻihi o ka pā unahi.ʻO L ka lōʻihi mua o EGaIn/Cu/PDMS ma mua o ke kau ʻana.
Hōʻike ka helu ana (GF) i ka naʻau o ka mea ʻike a ua wehewehe ʻia ʻo ia ka ratio o ka hoʻololi ʻana i ke kūʻē i ka hoʻololi ʻana i ka strain45.Ua hoʻonui ʻia ka GF mai 1.7 ma 10% strain i 2.6 ma 70% strain ma muli o ka hoʻololi geometric o ka metala.Ke hoʻohālikelike ʻia me nā ana kānana ʻē aʻe, ʻoi aku ka haʻahaʻa o ka waiwai GF EGaIn/Cu/PDMS.Ma ke ʻano he sensor, ʻoiai ʻaʻole kiʻekiʻe loa kāna GF, hōʻike ka EGaIn/Cu/PDMS i ka loli kūʻē ikaika i ka pane ʻana i kahi hōʻailona haʻahaʻa i ka haʻahaʻa haʻahaʻa haʻahaʻa.No ka loiloi ʻana i ka paʻa o ka conductivity o EGaIn/Cu/PDMS, ua nānā ʻia ke kūpaʻa uila i ka wā e hoʻolōʻihi ʻia ai nā ʻōniʻoniʻo ma 30% strain.E like me ka hoike ana ma ka fig.6b, ma hope o 4000 hoʻolōʻihi pōʻaiapuni, noho ka waiwai kūʻē i loko o 10%, ʻo ia paha ma muli o ka hoʻomau mau ʻana o ka unahi i ka wā e hoʻolōʻihi pinepine ʻia ana46.No laila, ua hoʻokūpaʻa ʻia ka paʻa uila lōʻihi o EGaIn / Cu / PDMS ma ke ʻano he electrode stretchable a me ka hilinaʻi o ka hōʻailona ma ke ʻano he kānana.
Ma kēia ʻatikala, kūkākūkā mākou i nā waiwai pulu maikaʻi o GaLM ma nā ʻili metala microstructured i hoʻokumu ʻia e ka infiltration.Ua hoʻokō ʻia ka pulu ʻana o EGaIn ma luna o nā ʻili metala a me nā pyramidal i mua o ka mahu HCl.Hiki ke wehewehe ʻia kēia me ka helu ma muli o ke ʻano Wenzel a me ke kaʻina hana wicking, e hōʻike ana i ka nui o ka post-microstructure i koi ʻia no ka wicking-induced wetting.ʻO ka pulu ʻana a me ke koho ʻana o EGaIn, alakaʻi ʻia e kahi ʻili metala microstructured, hiki iā ia ke hoʻopili i nā pale lole ma luna o nā wahi nui a hana i nā ʻano metala wai.Mālama ʻo EGaIn-coated Cu/PDMS substrates i nā pili uila ʻoiai i ka wā i hoʻolōʻihi ʻia a ma hope o nā pōʻai hoʻolōʻihi pinepine ʻia, e like me ka hōʻoia ʻana e SEM, EDS, a me nā ana kūʻē uila.Eia kekahi, ke hoʻololi hou a hilinaʻi ʻia ke kūpaʻa uila o Cu / PDMS i uhi ʻia me EGaIn i ka hoʻohālikelike ʻana i ke kaila i hoʻopili ʻia, e hōʻike ana i kona hoʻohana pono ʻana ma ke ʻano he ʻano ʻike.ʻO nā pōmaikaʻi hiki ke hāʻawi ʻia e ka loina wai metala pulu i hoʻokumu ʻia e ka imbibistion penei: (1) Hiki ke hoʻokō ʻia ka uhi GaLM a me ka hoʻohālikelike ʻana me ka ikaika ʻole o waho;(2) ʻO ka pulu ʻana o GaLM ma ka ʻili microstructure i uhi ʻia i ke keleawe he thermodynamic.ʻo ka hopena o ke kiʻiʻoniʻoni GaLM paʻa ma lalo o ka deformation;(3) hiki ke hoʻololi i ke kiʻekiʻe o ke kolamu i uhi ʻia i ke keleawe ke hana i kahi kiʻiʻoniʻoni GaLM me ka mānoanoa hoʻomalu.Eia kekahi, hoʻemi kēia ala i ka nui o GaLM e pono ai e hana i ke kiʻiʻoniʻoni, no ka mea, noho nā pou i kahi ʻāpana o ke kiʻi.No ka laʻana, i ka wā i hoʻokomo ʻia ai kahi ʻano o nā pou me ke anawaena o 200 μm (me kahi mamao ma waena o nā pou o 25 μm), ua hoʻohālikelike ʻia ka nui o GaLM i koi ʻia no ka hoʻokumu ʻana i ke kiʻiʻoniʻoni (~ 9 μm3/μm2) i ka leo kiʻiʻoniʻoni me ka ʻole. kia.(25 µm3/µm2).Eia nō naʻe, i kēia hihia, pono e noʻonoʻo ʻia ka piʻi ʻana o ke kūʻē theoretical, i manaʻo ʻia e like me ke kānāwai o Puet, e piʻi ana i ʻeiwa mau manawa.Ma ke ʻano holoʻokoʻa, hāʻawi nā waiwai pulu ʻokoʻa o nā metala wai i kūkākūkā ʻia ma kēia ʻatikala i kahi ala kūpono e waiho ai i nā metala wai ma nā ʻano substrate no nā mea uila hiki ke hoʻopololei a me nā noi e puka mai ana.
Ua hoʻomākaukau ʻia nā substrate PDMS ma ka hui ʻana o Sylgard 184 matrix (Dow Corning, USA) a me ka hardener ma nā ratio o 10:1 a me 15:1 no nā hoʻāʻo tensile, a ukali ʻia me ka mālama ʻana i ka umu ma 60°C.Ua waiho ʻia ke keleawe a i ʻole ke silika ma luna o nā wafer silika (Silicon Wafer, Namkang High Technology Co., Ltd., Republic of Korea) a me nā substrates PDMS me kahi ʻāpana titanium adhesive 10 nm mānoanoa me ka hoʻohana ʻana i kahi ʻōnaehana sputtering maʻamau.Hoʻokomo ʻia nā ʻāpana Columnar a me nā pyramidal ma kahi substrate PDMS me ka hoʻohana ʻana i kahi kaʻina kiʻi kiʻi wafer silika.ʻO 25 a me 18 µm ka laulā a me ke kiʻekiʻe o ke kumu pyramidal.Ua hoʻopaʻa ʻia ke kiʻekiʻe o ke kumu lāʻau ma 25 µm, 10 µm, a me 1 µm, a ʻo kona anawaena a me ka pitch ʻokoʻa mai 25 a 200 µm.
ʻO ka huina pili o EGaIn (gallium 75.5% / indium 24.5%, > 99.99%, Sigma Aldrich, Republic of Korea) ua ana ʻia me ka hoʻohana ʻana i kahi mea hoʻokalakupua kulu (DSA100S, KRUSS, Kelemānia). ʻO ka huina pili o EGaIn (gallium 75.5% / indium 24.5%, > 99.99%, Sigma Aldrich, Republic of Korea) ua ana ʻia me ka hoʻohana ʻana i kahi mea hoʻokalakupua kulu (DSA100S, KRUSS, Kelemānia). Краевой угол EGaIn (галлий 75,5 %/индий 24,5 %, >99,99 %, Sigma Aldrich, Республика Корея) Германия). Ua ana ʻia ke kihi kihi o EGaIn (gallium 75.5%/indium 24.5%, > 99.99%, Sigma Aldrich, Republic of Korea) me ka hoʻohana ʻana i kahi mea hoʻoponopono droplet (DSA100S, KRUSS, Kelemānia). EGaIn（镓75.5%/铟24.5%，>99.99%，Sigma Aldrich，大韩民国）的接触角使用滴形分析仪（DSA100S德民国，KRUSS，KRUSS。 Ua ana ʻia ʻo EGaIn (gallium75.5%/indium24.5%, >99.99%, Sigma Aldrich, 大韩民国) me ka hoʻohana ʻana i kahi mea hoʻopili pili (DSA100S, KRUSS, Kelemānia). Краевой угол EGaIn (галлий 75,5%/индий 24,5%, >99,99%, Sigma Aldrich, Республика Корея) мания). Ua ana ʻia ke kihi kihi o EGaIn (gallium 75.5%/indium 24.5%, > 99.99%, Sigma Aldrich, Republic of Korea) me ka hoʻohana ʻana i kahi mea hoʻoponopono pāpale (DSA100S, KRUSS, Kelemānia).E hoʻokomo i ka substrate i loko o ke keʻena aniani 5 cm × 5 cm × 5 cm a kau i kahi kulu 4-5 μl o EGaIn ma luna o ka substrate me ka hoʻohana ʻana i kahi syringe 0.5 mm anawaena.No ka hana ʻana i ka wai mahu HCl, 20 μL o ka solution HCl (37 wt.%, Samchun Chemicals, Republic of Korea) i waiho ʻia ma ka ʻaoʻao o ka substrate, i hoʻoheheʻe ʻia e hoʻopiha i ke keʻena i loko o 10 s.
Ua kiʻi ʻia ka ʻili me ka SEM (Tescan Vega 3, Tescan Korea, Republic of Korea).Ua hoʻohana ʻia ʻo EDS (Tescan Vega 3, Tescan Korea, Republic of Korea) no ke aʻo ʻana i ka loiloi qualitative a me ka hāʻawi ʻana.Ua kālailai ʻia ka topography ʻili o EGaIn/Cu/PDMS me ka hoʻohana ʻana i kahi profilometer optical (The Profilm3D, Filmetrics, USA).
No ka noiʻi ʻana i ka hoʻololi ʻana o ka conductivity uila i ka wā o ka holo ʻana, ua hoʻopaʻa ʻia nā mea hoʻohālike me ka EGaIn a me ka ʻole o nā lako hoʻolāʻau (Bending & Stretchable Machine System, SnM, Republic of Korea) a ua hoʻopili uila ʻia i kahi mika kumu Keithley 2400. No ka noiʻi ʻana i ka hoʻololi ʻana o ka conductivity uila i ka wā o ka holo ʻana, ua hoʻopaʻa ʻia nā mea hoʻohālike me ka EGaIn a me ka ʻole o nā lako hoʻolāʻau (Bending & Stretchable Machine System, SnM, Republic of Korea) a ua hoʻopili uila ʻia i kahi mika kumu Keithley 2400. Для исследования изменения электропроводности во время циклов растяжения образцы с EGaIn и без него закреплялид & Stretchable Machine System, SnM, Республика Корея) и электрически подключали к измерителю источника Keithley 2400. No ke aʻo ʻana i ka hoʻololi ʻana o ka conductivity uila i ka wā o ka holo ʻana, ua kau ʻia nā laʻana me ka EGaIn a me ka ʻole ma luna o kahi mea hoʻolāʻau (Bending & Stretchable Machine System, SnM, Republic of Korea) a hoʻopili uila ʻia i kahi mika kumu Keithley 2400.No ke aʻo ʻana i ka hoʻololi ʻana i ka conductivity uila i ka wā o ka holo ʻana, ua kau ʻia nā laʻana me ka EGaIn a me ka ʻole o ka mea hoʻolōʻihi (Bending and Stretching Machine Systems, SnM, Republic of Korea) a pili uila i kahi Keithley 2400 SourceMeter.Ana i ka hoʻololi ʻana o ke kūʻē ʻana mai ka 0% a hiki i ka 70% o ke kānana hāpana.No ka ho'āʻo kūpaʻa, ua ana ʻia ka hoʻololi ʻana o ke kū'ē ʻana ma luna o 4000 30% mau pōʻaiapili.
No ka ʻike hou aku e pili ana i ka hoʻolālā haʻawina, e ʻike i ka abstract study Nature i hoʻopili ʻia i kēia ʻatikala.
Hōʻike ʻia nā ʻikepili e kākoʻo ana i nā hopena o kēia noiʻi ʻana i nā faila ʻikepili hou a me nā faila Raw Data.Hāʻawi kēia ʻatikala i ka ʻikepili kumu.
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